ST13007D high voltage fast-switching npn power transistor n improved specification: - lower leakage current - tighter gain range - dc current gain preselection - tighter storage time range n high voltage capability n integrated free-wheeling diode n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed n fully characterized at 125 o c n large rbsoa applications n up to 120w electronic transformers for halogen lamps n switch mode power supplies description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. it uses a cellular emitter structure to enhance switching speeds. internal schematic diagram february 2002 absolute maximum ratings symbol parameter value unit v cev collector-emitter voltage (v be = -1.5v) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 9 v i c collector current 8 a i cm collector peak current 16 a i b base current 4 a i bm base peak current 8 a p tot total dissipation at t c 25 o c 80 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 ? 1/7
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 1.56 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 700 v v ce = 700 v t c = 100 o c 10 0.5 m a ma i ceo collector cut-off current (i b = 0) v ce = 400 v 100 m a i ebo emitter cut-off current (i c = 0) v eb = 9 v 100 m a v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 8 a i b = 2 a i c = 5 a i b = 1 a t c = 100 o c 0.8 1.5 2 3 v v v v v be(sat) * base-emitter saturation voltage i c = 2 a i b = 0.4 a i c = 5 a i b = 1 a i c = 5 a i b = 1 a t c = 100 o c 1.2 1.6 1.5 v v v h fe * dc current gain i c = 2 a v ce = 5 v i c = 5 a v ce = 5 v 18 8 40 25 v f diode forward voltage i c = 3 a 2.5 v t s t f inductive load storage time fall time i c = 5 a v cl = 250 v r bb = 0 w i b1 = 1 a v be(off) = -5 v l = 200 m h (see figure 1) 0.8 40 1.6 100 m s ns t s t f inductive load storage time fall time i c = 5 a v cl = 250 v r bb = 0 w i b1 = 1 a v be(off) = -5 v l = 200 m h t c = 125 o c (see figure 1) 1.1 80 m s ns * pulsed: pulse duration = 300 m s, duty cycle 2 %. ST13007D 2/7
safe operating area dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage ST13007D 3/7
diode forward voltage switching time inductive load switching time resistive load reverse biased soa ST13007D 4/7
figure 1: inductive load switching test circuit. figure 2: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor ST13007D 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data ST13007D 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com ST13007D 7/7
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